The wafer defects influence the yield of a wafer. The integrated circuits (IC) manufacturers usually use a Poisson distribution based c-chart to monitor the lot-to-lot wafer defects. As the wafer size increases, defects on wafer tend to cluster. When the c-chart is used, the clustered defects frequently cause erroneous results. The main objective of this study is to develop a hierarchical adaptive control process to monitor the clustered defects effectively and detect the wafer-to-wafer variation and lot-to-lot variation simultaneously using data mining technique.
Tong, Leeing; Lee, Hsingyin; Huang, Chifeng; Lin, Changke; and Yang, Chienhui, "Constructing Control Process for Wafer Defects Using Data Mining Technique" (2004). ICEB 2004 Proceedings (Beijing, China). 208.